Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors
| Autor: | Manabu Yanagihara, Masaya Mannoh, Hideyuki Okita, Saichiro Kaneko, Michinobu Tsuda, Hisayoshi Matsuo, Kenichiro Tanaka, Yasuhiro Uemoto, Akihiko Nishio, Masayuki Kuroda, Keiichi Matsunaga, Masahiro Hikita, Takahiro Sato, Ayanori Ikoshi, Tatsuo Morita |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor Wide-bandgap semiconductor Order (ring theory) 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials Threshold voltage law.invention Barrier layer law Logic gate 0103 physical sciences Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | IEEE Transactions on Electron Devices. 64:1026-1031 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2017.2653847 |
| Popis: | A new gate recess process technology has been successfully implemented in normally off GaN-based gate injection transistors, in order to improve the process stability. In this process, unlike the conventional gate recess process, the initial AlGaN barrier layer in the gate region is fully removed, and then, AlGaN is reproduced by epitaxial regrowth for the first time. By using this technology, the standard deviation of threshold voltage ( ${V} _{\mathsf {th}}$ ) improves drastically from 229 to 63 mV in 6-in substrate. Furthermore, ${V} _{\mathsf {th}}$ values were easily controlled from 1.0 to 2.3 V by changing the regrown AlGaN thickness, without changing other dc characteristics and their distributions. |
| Databáze: | OpenAIRE |
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