Loop Type of Inductively Coupled Thermal Plasmas System for Rapid Two-Dimensional Oxidation of Si Substrate Surface
| Autor: | Mai Kai Suan Tial, Hiroshi Kawaura, Tatsuo Ishijima, Takumi Tsuchiya, Tetsuya Yukimoto, Yuji Maruyama, Yoshihiko Uesugi, Yasunori Tanaka, A. Fujita |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Surface (mathematics) Materials science General Chemical Engineering Oxide Analytical chemistry 02 engineering and technology General Chemistry Plasma Substrate (electronics) Type (model theory) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Loop (topology) chemistry.chemical_compound chemistry 0103 physical sciences Thermal 0210 nano-technology Layer (electronics) |
| Zdroj: | Plasma Chemistry and Plasma Processing. 38:599-620 |
| ISSN: | 1572-8986 0272-4324 |
| Popis: | This paper describes the use of loop-type inductively coupled thermal plasmas (loop-ICTP) for two-dimensional (2D) rapid oxidation processing. The unique and original loop-ICTP torch has been developed for large-area rapid materials processing. We applied the loop-ICTP to surface oxidation of a Si substrate as an example of materials processing. A part of the $$\hbox {Ar/O}_2$$ loop-ICTP is formed, lying linearly on the surface of the substrate. In addition, scanning the Si substrate enabled 2D oxidation for the whole Si substrate surface. The uniformity of the oxide layer thickness and the oxidation rate were estimated by measuring the thickness of the oxide layer fabricated on the Si substrate. As a result, controlling the pressure offered more uniform oxide layer thickness, and gas injection onto the linear plasma on the substrate improved the uniformity of the oxide thickness. It should be noted that only three minutes of exposure of $$\hbox {Ar/O}_2$$ loop-ICTP is sufficient to create an oxide layer with approximately 100 nm thickness for a 2-inch Si substrate surface. |
| Databáze: | OpenAIRE |
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