Local structure of implanted B in amorphous Si

Autor:	Hans-Jürgen Stöckmann, B. Ittermann, H. Thieß, F. Mai, K. Marbach, P. Meier, H. Ackermann, H. Mell, F. Kroll, M. Heemeier, M. Füllgrabe, D. Peters
Rok vydání:	2001
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon Doping Analytical chemistry chemistry.chemical_element Amorphous solid Crystallography Ion implantation chemistry Impurity Pairing Mössbauer spectroscopy Boron
Zdroj:	Applied Physics Letters. 79:338-340
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1384482
Popis:	12B probe nuclei are implanted in amorphous Si and monitored by β-radiation-detected nuclear magnetic resonance (β-NMR). Independently of growth conditions and impurity content, we find the same frequency distribution in a variety of samples. This is interpreted as an intrinsic signature of the amorphous environment while preferential B–H pairing is not observed. Comparing our data with earlier 11B-NMR work, we find the local B configuration to be completely controlled by the incorporation process. In our low-dose implantation experiment, all B is fourfold coordinated and electrically active. This is in contrast to gas-phase doping or high-dose implantation where the threefold coordination prevails.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8ae8eab77ac70064cff1a78dce5322b3 https://doi.org/10.1063/1.1384482 Zobrazit plný text záznamu