Electrical and structural properties of GeMoW ohmic contact to an In0.5Ga0.5As cap layer on n-Type GaAs
| Autor: | K. G. Merkel, S. D. Walck, Victor M. Bright, L. M. Casas, S. N. Schauer |
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| Rok vydání: | 1994 |
| Předmět: |
Auger electron spectroscopy
Materials science Solid-state physics business.industry Annealing (metallurgy) Contact resistance Analytical chemistry chemistry.chemical_element Germanium Atmospheric temperature range Tungsten Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Ohmic contact |
| Zdroj: | Journal of Electronic Materials. 23:991-996 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02655375 |
| Popis: | The results of electrical and structural characterization of a GeMoW ohmic contact to n-type GaAs with a 100A thick, In0.5Ga0.5As cap layer are presented. Electrical characterization demonstrates ohmic behavior over a wide annealing temperature range from 300 to 700°C. A minimum contact resistance of 0.176 Ω-mm was measured after furnace annealing at 500°C. The contact resistance is also insensitive to anneal time at 500°C. Structural characterization using secondary ion mass spectroscopy, Auger electron spectroscopy, and x-ray diffraction indicates excess In as a potential cause of increased contact resistance following 700°C annealing. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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