| Popis: |
Very high dose ion implantation has been used to form stoichiometric quantities of buried compounds and alloys. Examples of these applications include silicon-on-insulator, buried conductors and the creation of new surface alloys with metal beams. The dynamically changing implantation conditions make conventional modeling codes inappropriate. A depth profile modeling program has been written which accounts for many of the important effects present at these extreme dose levels. These include surface sputtering at arbitrary angles of incidence, dynamically changing effects due to composition alteration, parameter changes resulting from compound formation and multilayers of elements, mixtures and compounds. The model also includes sample rotation, multiple dose/energy summations and realistic instantaneous Pearson distribution functions. The predictions from the code are compared to published depth profile measurements and application examples are provided. |
