Elimination of notching phenomenon which occurs while performing deep silicon etching and stopping on an insulating layer
| Autor: | T. Bourouina, A. Summanwar, F. Neuilly |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Microelectromechanical systems
Materials science Silicon business.industry technology industry and agriculture chemistry.chemical_element Silicon on insulator Biasing Substrate (electronics) Notching chemistry Etching (microfabrication) Electronic engineering Optoelectronics business Layer (electronics) |
| Zdroj: | 2008 Ph.D. Research in Microelectronics and Electronics. |
| DOI: | 10.1109/rme.2008.4595742 |
| Popis: | The notching phenomenon has been observed during high aspect ratio silicon etching while performing an etch stop on a dielectric layer. It is generally considered as a critical issue in the fabrication of MEMS structures on SOI substrates. This article reports a novel solution for the elimination of the notching while using conventional non-pulsed RF substrate biasing. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|