Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes

Autor:	Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Makoto Kasu
Rok vydání:	2023
Předmět:	General Engineering General Physics and Astronomy
Zdroj:	Japanese Journal of Applied Physics. 62:SF1001
ISSN:	1347-4065 0021-4922
DOI:	10.35848/1347-4065/acb0b8
Popis:	This study elucidates the dislocation responsible for the leakage current in a halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diode. A high reverse leakage current of −0.98 μA was observed at −100 V as an emission pattern via ultrahigh-sensitive emission microscopy. This was attributed to the presence of dislocation. Moreover, the Burgers vector of this dislocation was determined to be ⫽ 〈1 3 ¯ 2〉 from the g·b invisibility criteria via synchrotron X-ray topography observation. This dislocation was speculated to be induced by the relaxation of the strain field surrounding the void and subsequently propagated to the surface. Cross-sectional scanning transmission electron microscopy revealed multiple threading dislocations along the (100) plane.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8ac199e956c8592939b98fe6cd8e13f4 https://doi.org/10.35848/1347-4065/acb0b8 Zobrazit plný text záznamu