A 0.24 μm SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz f/sub t/ HBT and 0.18 μm L/sub ett/ CMOS
| Autor: | Gregory G. Freeman, Bradley A. Orner, S. Subbanna, Basanth Jagannathan, Robert A. Groves, Douglas D. Coolbaugh, Peter J. Geiss, J. Malinowski, S. St Onge, J. Jeng, M. Gordon, K. Stein, D. L. Harame, Douglas B. Hershberger, David C. Ahlgren, S. Kilpatrick, J. Dunn, Peter B. Gray, L. Lanzerotti, R. Johnson, Kathryn T. Schonenberg, Michael J. Zierak, Natalie B. Feilchenfeld, Alvin J. Joseph |
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| Rok vydání: | 2003 |
| Předmět: |
Physics
business.industry Heterojunction bipolar transistor Electrical engineering Mixed-signal integrated circuit Hardware_PERFORMANCEANDRELIABILITY BiCMOS Silicon-germanium chemistry.chemical_compound CMOS chemistry Gate oxide visual_art Electronic component Hardware_INTEGRATEDCIRCUITS visual_art.visual_art_medium Radio frequency business Hardware_LOGICDESIGN |
| Zdroj: | Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024). |
| Popis: | A new base-after-gate integration scheme has been developed to integrate a 47 GHz f/sub t/, 65 GHz F/sub max/SiGe HBT process with a 0.24 /spl mu/m CMOS technology having 0.18 /spl mu/m L/sub eff/ and 5 nm gate oxide. We discuss the benefits and challenges of this integration scheme which decouples the HBT from the CMOS thermal cycles. We also describe the resulting 0.24 /spl mu/m SiGe BiCMOS technology, BiCMOS 6HP, which includes a 7 nm dual gate oxide option and full suite of passive components. The technology provides a high level of integration for mixed-signal RF applications. |
| Databáze: | OpenAIRE |
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