Cesium near-surface concentration in low energy, negative mode dynamic SIMS
| Autor: | L. Geenen, Thierry Conard, B. Van Daele, Wilfried Vandervorst, Alexis Franquet, Bart Berghmans |
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| Rok vydání: | 2008 |
| Předmět: |
Silicon
Resolution (mass spectrometry) Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Surface concentration Condensed Matter Physics Surfaces Coatings and Films Ion Low energy chemistry Sputtering Caesium Steady state (chemistry) Atomic physics |
| Zdroj: | Applied Surface Science. 255:1316-1319 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2008.05.020 |
| Popis: | Reducing the energy of the primary ions will improve the depth resolution in SIMS depth profiling. At ultra low energies ( + ions, which are commonly used for their enhancement of negative secondary ion formation, and discuss the impact of these extreme conditions on the steady state surface concentration of cesium. In contrary to what is found from sputtering-based retention models, the steady state surface concentration of (retained) cesium on silicon reaches a maximum value in the order of 15 at%. |
| Databáze: | OpenAIRE |
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