Interfaces Between Cd Te and ALD Al 2O3
| Autor: | Craig L. Perkins, Matthew O. Reese, Tursun Ablekim, Kelvin G. Lynn, William Nemeth, Wyatt K. Metzger, Santosh K. Swain, Darius Kuciauskas, Teresa M. Barnes |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Passivation Analytical chemistry Field effect chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Oxygen Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials Atomic layer deposition X-ray photoelectron spectroscopy chemistry 0103 physical sciences Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | IEEE Journal of Photovoltaics. 8:1858-1861 |
| ISSN: | 2156-3403 2156-3381 |
| Popis: | We present a combination of X-ray photoelectron spectroscopy (XPS) and time-resolved photoluminescence (TRPL) to probe the details of interface formation between CdTe and alumina deposited by atomic layer deposition (ALD). Alumina ALD using water as the oxygen source causes the elimination of Te oxides that are initially present on air-exposed CdTe surfaces. TRPL on the resulting CdTe interface indicates some degree of passivation. On the other hand, postgrowth treatment of Al2O3/CdTe structures with CdCl2 and oxygen causes regrowth of Te oxides. Some of these structures show improved lifetimes, thereby pointing toward a critical role for Te oxides in interfacial CdTe passivation by Al2O3. Direct measurement of band positions with XPS indicates that the passivation is caused primarily by chemical rather than field effect mechanisms. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|