Characterization of (Al,Ga)As injection lasers using the luminescence emitted from the substrate
| Autor: | L. A. Koszi, R. L. Hartman |
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| Rok vydání: | 1978 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 49:5731-5744 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | The spontaneous radiation generated in the active region of (Al,Ga)As double‐heterostructure (DH) proton‐delineated stripe‐geometry lasers has been studied by measuring the luminescence (Ls) emitted from a window fabricated in the metallization on the substrate. Observations of the intensity of this luminescence with an image converter provide an effective means for detecting growth‐, processing‐, and aging‐induced defects. In addition, these measurements provide a simple procedure for separating changes in optical loss from changes in radiative‐recombination efficiency. Thus, Ls observations are useful for quality control and laser‐aging analysis. For lasers with 8% aluminum in the active region, Ls is shown to be principally radiation reemitted from a very thin layer of GaAs substrate at the interface with the n‐type ternary layer. Reasonably high spatial resolution (∼3 μm) of the radiation from the active stripe region is retained in this absorption‐reemission process. For devices with no aluminum adde... |
| Databáze: | OpenAIRE |
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