Vidicon target of ap‐i‐nstructure usinga‐Si:H
| Autor: | Isamu Shimizu, Shunri Oda, Eiichi Inoue, Keishi Saito |
|---|---|
| Rok vydání: | 1980 |
| Předmět: |
inorganic chemicals
Amorphous silicon Glow discharge Materials science Silicon business.industry Doping technology industry and agriculture General Physics and Astronomy chemistry.chemical_element Substrate (electronics) Silane chemistry.chemical_compound chemistry Electrode Optoelectronics business Layer (electronics) |
| Zdroj: | Journal of Applied Physics. 51:6422-6423 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | A vidicon target of a p‐i‐n structure has been fabricated using amorphous silicon prepared by a rf glow discharge of silane (SiH4). A thin layer of n‐type a‐silicon doped with phosphorus was provided between a photosensitive layer and a substrate coated with a transparent electrode (SnO2:Sb) to prohibit injection of holes. An excellent photoresponse was attained for visible light. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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