Estimation of RF performance from LF measurements: Towards the design for reliability in RF-MEMS
| Autor: | Mehmet Kaynak, Fabio Coccetti, J.-L. Cazaux, Bernd Tillack, N. Torres Matabosch, Matthias Wietstruck |
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| Rok vydání: | 2012 |
| Předmět: |
Microelectromechanical systems
Engineering business.industry Capacitive sensing Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Tracking (particle physics) Capacitance Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Reliability (semiconductor) Hardware_INTEGRATEDCIRCUITS Electronic engineering Equivalent circuit Wafer State (computer science) Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 52:2310-2313 |
| ISSN: | 0026-2714 |
| Popis: | This paper presents a method which allows the prediction of the RF performance of capacitive RF-MEMS by measuring the UP and DOWN state capacitances. The method is based on the combined use of a very accurate lumped element equivalent circuit model and wafer level measurements of the capacitances in two different states. This approach allows very fast monitoring of the complete RF performance in the entire band, at the cost of a simple (LF) capacitance measurements and an equivalent circuit model extraction. The results presented here demonstrate the efficiency of this technique in tracking or predicting deviation due to manufacturing process dispersions or other device features difficult to account for experimentally. |
| Databáze: | OpenAIRE |
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