| Autor: |
Shigeo Koduki, Hironori Yoshioka, Hideki Okumura, Satoshi Aida, Masakazu Yamaguchi, Wataru Saito, Masaru Izumisawa, Ichiro Omura, T. Ogura |
| Rok vydání: |
2006 |
| Předmět: |
|
| Zdroj: |
2006 IEEE International Symposium on Power Semiconductor Devices & IC's. |
| DOI: |
10.1109/ispsd.2006.1666129 |
| Popis: |
Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mOmegacm2 were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 mum for the on-resistance reduction. The demonstrated on-resistance is the lowest one among previously reported 600 V-class SJ-MOSFETs. The fabricated MOSFET also realized low RonQgd of 1.8 OmeganC and high avalanche current of 175 A/cm2 |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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