Excimer laser modification of thin AlN films
| Autor: | Golam Newaz, Gina S. Shreve, R.J. Baird, Greg Auner, L. W. Rosenberger, Y.V. Danylyuk, Daniel G. Georgiev |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Excimer laser business.industry medicine.medical_treatment Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry Nitride Condensed Matter Physics Laser Fluence Surfaces Coatings and Films law.invention X-ray photoelectron spectroscopy law Sapphire medicine Optoelectronics Thin film business Layer (electronics) |
| Zdroj: | Applied Surface Science. 249:45-53 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2004.11.027 |
| Popis: | The potential of excimer laser micro-processing for surface modification of aluminum nitride (AlN) thin films was studied. Thin films of AlN were deposited by plasma-source molecular beam epitaxy (PSMBE) on silicon and sapphire substrates. These films were then exposed to different fluence levels of KrF ( λ = 248 nm) excimer laser radiation in an ambient air environment, and the changes in the film surface were studied by X-ray photoelectron spectroscopy, atomic force microscopy and optical spectrophotometry. The results show that there is a narrow range of laser fluences, just above 1.0 J/cm 2 , within which mostly photochemical transformations of the film surface take place. These transformations consist of both oxidation and decomposition to metallic Al of the original film within a very thin sub-surface layer with thickness of several tens of nanometers. No changes were observed at fluences below 1.0 J/cm 2 . Above a fluence of 1.0 J/cm 2 , severe photomechanical damage consisting of film cracking and detachment was found to accompany the photochemical and photothermal changes in the film. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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