Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs

Autor:	Jen-Inn Chyi, H.-K. Lin, Y. M. Hsin, Han-Chieh Ho, Pei-Chin Chiu, Zon-Yan Gao
Rok vydání:	2012
Předmět:	Electron mobility Materials science Scattering business.industry Transconductance Heterojunction Temperature measurement Electronic Optical and Magnetic Materials Logic gate Breakdown voltage Optoelectronics Electrical and Electronic Engineering Drain current business
Zdroj:	IEEE Electron Device Letters. 33:964-966
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2012.2193656
Popis:	This letter reports the effect of growth temperature on carrier transport characteristics in In0.4Ga0.6Sb/AlSb heterostructure and demonstrates that hole mobility was enhanced by eliminating a parallel conducting channel in the buffer layers. Based on optimized growth conditions, hole mobility as high as 1220 cm2/V·s with carrier concentration of 1.3 ×1012 cm-2 was achieved. A 0.2- μm-gate-length In0.4Ga0.6Sb/AlSb p-channel device exhibited a maximum drain current of 102 mA/mm, a peak transconductance of 92 mS/mm, and an on-state breakdown voltage over 3 V. The pinchoff was observed for a gate bias of 0.6 V at drain current of 1 mA/mm. The current-gain and power-gain cutoff frequencies were 15 and 20 GHz, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8a9859f0afa2055a99c73e161c8125e8 https://doi.org/10.1109/led.2012.2193656 Zobrazit plný text záznamu