Effect of correlation in the impurity defect distribution on the micromechanical properties of GaAs: Te single crystals
| Autor: | M. M. Nukenov, N. A. Davletkil’deev, N. A. Semikolenova, V. A. Bogdanova |
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| Rok vydání: | 2008 |
| Předmět: |
Spatial correlation
Materials science Condensed matter physics Solid-state physics Phonon Condensed Matter Physics Microstructure Indentation hardness Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Transverse plane Impurity Condensed Matter::Superconductivity Dislocation |
| Zdroj: | Physics of the Solid State. 50:244-249 |
| ISSN: | 1090-6460 1063-7834 |
| DOI: | 10.1134/s1063783408020066 |
| Popis: | The micromechanical properties of Te-doped GaAs single crystals with free carrier density n 0 = 1017−5 × 1018 cm−3 were studied. The obtained data are as follows: the nonmonotonic concentration dependences of the microhardness, the lengths of dislocation rosette rays, the densities of dislocations, and the position and half-width of the Raman line of a transverse optical phonon. The data are interpreted in terms of spatial correlation in the impurity defect distribution. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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