Effect of hydrogen on stability of amorphous silicon thin films
| Autor: | Stanislaw M. Pietruszko, Jin Jang |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
inorganic chemicals
Amorphous silicon Silicon Hydrogen Renewable Energy Sustainability and the Environment Annealing (metallurgy) Inorganic chemistry technology industry and agriculture Analytical chemistry chemistry.chemical_element Chemical vapor deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry.chemical_compound Ion implantation chemistry Condensed Matter::Superconductivity Physics::Atomic Physics Thin film Boron |
| Zdroj: | Solar Energy Materials and Solar Cells. 71:459-464 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/s0927-0248(01)00100-3 |
| Popis: | This paper presents results of the investigation of hydrogen influence on the stability of low pressure chemical vapour deposition a-Si films. We measured boron- or phosphorus-doped films post-hydrogenated by ion implantation with different hydrogen doses. The dark conductivity after fast quenching and slow cooling and the isothermal relaxation were measured at different annealing temperatures. It was found that higher hydrogen concentration causes greater metastable changes but shorter relaxation time of defects. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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