InGaAs/InGaAsP MQW electroabsorption modulator integrated DFB-LD structure grown by selective area epitaxy

Autor: T.I. Kim, D.S. Bang, Sin-Doo Lee, J.S. Yu, Seungryong Cho, Y.K. Oh, Namhoon Kim, A.G. Choo, J.S. Ma, H.C. Ha
Rok vydání: 2003
Předmět:
Zdroj: Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464).
Popis: High speed and low chirp light sources are among the most essential components in long distance multigigabit optical communication systems. InGaAsP-InGaAsP electroabsorption (EA) modulator integrated DFB-LDs (EMILD) have attracted special interest because of their small size, low operating voltage and low chirp. In this paper, the optical and electrical characteristics of an InGaAs-InGaAsP MQW EMILD were studied.
Databáze: OpenAIRE