InGaAs/InGaAsP MQW electroabsorption modulator integrated DFB-LD structure grown by selective area epitaxy

Autor:	T.I. Kim, D.S. Bang, Sin-Doo Lee, J.S. Yu, Seungryong Cho, Y.K. Oh, Namhoon Kim, A.G. Choo, J.S. Ma, H.C. Ha
Rok vydání:	2003
Předmět:	chemistry.chemical_compound Optics Materials science Selective area epitaxy chemistry business.industry Chirp Optical communication Optoelectronics Operating voltage business Gallium arsenide
Zdroj:	Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464).
Popis:	High speed and low chirp light sources are among the most essential components in long distance multigigabit optical communication systems. InGaAsP-InGaAsP electroabsorption (EA) modulator integrated DFB-LDs (EMILD) have attracted special interest because of their small size, low operating voltage and low chirp. In this paper, the optical and electrical characteristics of an InGaAs-InGaAsP MQW EMILD were studied.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8a831ab9dfafec2eff9a047121b03248 https://doi.org/10.1109/cleopr.1999.817896 Zobrazit plný text záznamu