p-Channel TFT's using magnetron-sputtered Ta2O5films as gate insulators
| Autor: | T. Unagami, B. Tsujiyama, Shunji Seki |
|---|---|
| Rok vydání: | 1984 |
| Předmět: |
Fused quartz
Materials science Silicon business.industry Silicon dioxide chemistry.chemical_element engineering.material Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Polycrystalline silicon chemistry law Sputtering Thin-film transistor Tantalum pentoxide engineering Electronic engineering Optoelectronics Electrical and Electronic Engineering Reactive-ion etching business |
| Zdroj: | IEEE Electron Device Letters. 5:197-198 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/edl.1984.25885 |
| Popis: | Metal-gate thin-film transistors (TFT's) have been fabricated in layers of laser-recrystallized polycrystalline silicon on fused quartz substrates at processing temperatures below 625°C. Tantalum pentoxide (Ta 2 O 5 ) was used as a gate insulator instead of a conventional thermally grown silicon dioxide (SiO 2 ). Ta 2 O 5 gate insulator was deposited onto the recrystallized silicon layer at room temperature, using an RF-magnetron sputtering system. The reactive ion etching method, using CF 4 as a reactive gas, was employed in patterning deposited Ta 2 O 5 . These TFT's have exhibited p-channel depletion-mode characteristics with a threshold voltage of 2.5 V and a transconductance of 70 µS at V g = - 2 V. An on-off current ratio exceeding 105has been obtained. |
| Databáze: | OpenAIRE |
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