Tantalum-gate thin-film SOI nMOS and pMOS for low-power applications

Autor:	Kazuhide Ino, Hisayuki Shimada, Tadahiro Ohmi, Yuuichi Hirano, T. Ushiki
Rok vydání:	1997
Předmět:	Materials science business.industry Transistor Electrical engineering Silicon on insulator Electronic Optical and Magnetic Materials PMOS logic law.invention Threshold voltage CMOS law Thin-film transistor MOSFET Optoelectronics Electrical and Electronic Engineering business NMOS logic
Zdroj:	IEEE Transactions on Electron Devices. 44:1903-1907
ISSN:	0018-9383
DOI:	10.1109/16.641359
Popis:	The threshold voltages of thin-film fully-depleted silicon-on-insulator (FDSOI) nMOS and pMOS have been controlled by employing tantalum (Ta) as the gate materials. Ta-gate FDSOI MOSFET's have excellent threshold voltage control for 1.0 V application on low impurity concentration SOI layers in both nMOS and pMOS. The low-temperature processing after the gate oxidation step leads to good on/off characteristics in Ta-gate SOI MOSFET's because of no reaction between Ta gate electrode and SiO/sub 2/ gate insulator. This technology makes it possible to drastically decrease the number of the process steps for CMOS fabrication, because the same gate material is available for both nMOS and pMOS.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8a66593dd09cf4a059b400d101a06ddd https://doi.org/10.1109/16.641359 Zobrazit plný text záznamu