Hybrid MOS-bipolar transistor switching with profiled drive signal
| Autor: | J. Wilkes, M.J. Lazarus |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Engineering
business.industry Bipolar junction transistor Transistor Electrical engineering Multiple-emitter transistor Hardware_PERFORMANCEANDRELIABILITY Insulated-gate bipolar transistor law.invention Darlington transistor law Power electronics Hardware_INTEGRATEDCIRCUITS Power semiconductor device Electrical and Electronic Engineering Power MOSFET business Hardware_LOGICDESIGN |
| Zdroj: | IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications. 41:662-665 |
| ISSN: | 1057-7122 |
| DOI: | 10.1109/81.329726 |
| Popis: | A method for switching MOS-bipolar transistor hybrids has been developed, which improves the transition performance and minimises the base drive power requirements in a split Darlington configuration with low on-state voltage. The type of wave shaping of the input control signal, enables unusually small and high speed MOSFETs to drive exceptionally high base current pulses for fast turn-on of a bipolar power transistor. Since bipolar over-saturation is avoided, the turn-off is also improved. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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