Optimal placement of shunt capacitor with VCPI to improve voltage profile using Mi power
| Autor: | Naraharisetti Jaya Naga Lakshmi, Upendra Prasad, Ramesh Devarapalli, Nikhil Kumar Sinha, Bathina Venkateswara Rao |
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| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | IOP Conference Series: Materials Science and Engineering. 981:042061 |
| ISSN: | 1757-899X 1757-8981 |
| DOI: | 10.1088/1757-899x/981/4/042061 |
| Popis: | Day to day the importance and usage of electric power is increasing, in order to reach this power demand, generation of power is being increased. But the transmission grid fails to meet the developments in generation, as construction of new transmission lines involve more time than building new generation facilities. So, updating or upgrading the existing facilities will be more beneficial than building new ones. This is achieved by providing proper reactive compensation. This main objective of the paper is placement of shunt capacitor for voltage profile improvement and reactive power compensation. The voltage stability index, called voltage collapse prediction index (VCPI), decides the shunt capacitor placement. This paper deals with placement of shunt capacitor banks to improve voltage at weakest buses. The shunt capacitor banks connected to the system to prevent the low voltages during the high loading conditions. The reactive compensation and reduction of losses and power transfer capability can be increased by placing of shunt capacitor. The proposed technique is validated with load flow analysis on IEEE 14 bus system carry out by Mi-power software. From the results obtained it is verified that the load flow analysis can be easily done with Mi-power which is a fast and robust tool with a powerful GUI to solve. Finally, the voltage profile improvement is verified with the placement of shunt capacitor. |
| Databáze: | OpenAIRE |
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