Thermally induced carbon-oxygen complexes in GaAs

Autor:	M. Jurisch, W. Ulrici
Rok vydání:	2005
Předmět:	Vibrational absorption Absorption spectroscopy Chemistry Stereochemistry Annealing (metallurgy) Doping Analytical chemistry Infrared spectroscopy chemistry.chemical_element Condensed Matter Physics Oxygen Electronic Optical and Magnetic Materials Impurity Molecular vibration
Zdroj:	physica status solidi (b). 242:2433-2439
ISSN:	1521-3951 0370-1972
DOI:	10.1002/pssb.200540094
Popis:	In LEC-grown oxygen-containing GaAs, a vibrational absorption line is observed at 2059.6 cm–1 for T = 7 K after long-time annealing at (700 ± 100) °C. This line is due to the stretching mode of a 12C–16O complex, since the line due to the isotopically shifted 13C–16O mode is observed at 2003.8 cm–1. Several other 12C–16O stretching modes found in this frequency region are assigned to C–O complexes with different environments. The formation of C–O complexes around 700 °C becomes possible as a result of the mobility of oxygen atoms. After the same annealing procedure, two vibrational lines are measured at 1828.2 and 1891.4 cm–1 for T = 7 K and assigned to the stretching modes of an 11B–16O (10B–16O) complex. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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