4.1: Low-Temperature-Processed IGZO TFTs for Flexible AMOLED with Integrated Gate Driver Circuits

Autor: Keiji Sugi, Tomomasa Ueda, Junichi Tonotani, Tatsunori Sakano, Nobuyoshi Saito, Hisashi Kameoka, Keiko Akimoto, Isao Amemiya, Yujiro Hara, Kentaro Miura, Hajime Yamaguchi, Shintaro Nakano
Rok vydání: 2011
Předmět:
Zdroj: SID Symposium Digest of Technical Papers. 42:21-24
ISSN: 0097-966X
Popis: We have reduced threshold voltage shift of IGZO TFTs processed at 200°C under bias-temperature stress of Vg = 20 V at 70°C for 2000 s to 0.22 V by optimizing IGZO deposition and annealing conditions. A flexible AMOLED display with integrated gate driver circuits has been demonstrated.
Databáze: OpenAIRE