N-ion implantation of micro‐nanocrystalline duplex structured diamond films for enhancing their electron field emission properties
| Autor: | Chuang-Chi Horng, Kalpataru Panda, I.-Nan Lin, Balakrishanan Sundaravel, Horng-Yi Chiang, Hsiu-Fung Cheng, Huang-Chin Chen |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Diamond Nanotechnology Surfaces and Interfaces General Chemistry engineering.material Condensed Matter Physics Nanocrystalline material Ion source Surfaces Coatings and Films Field electron emission Ion implantation Transmission electron microscopy Materials Chemistry engineering Optoelectronics business Current density |
| Zdroj: | Surface and Coatings Technology. 228:S331-S335 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/j.surfcoat.2012.05.107 |
| Popis: | The improvement on the electron field emission (EFE) properties of duplex-structured diamond films by N-ion implantation/post-annealing processes was investigated. The duplex-structured diamond films were synthesized by a two-step microwave plasma enhanced CVD process. Transmission electron microscopy (TEM) examinations reveal that all the as-prepared, N-ion implanted and post-annealed diamond films contained large microcrystalline-diamond (MCD) aggregates sparsely distributed among the matrix of ultra-small diamond grains. While the granular structure of the MCD aggregates was insignificantly modified due to the N-ion implantation/post-annealing processes, that of the UNCD regions was markedly altered. The EFE process for the MCD/UNCD films can be turned on at (E0)MCD/UNCD = 8.21 V/μm, which is even smaller than the E0-field for the UNCD films ((E0)UNCD = 13.34 V/μm). These N-ion implanted/post-annealed diamond films attained an EFE current density of (Je)MCD/UNCD = 0.4 mA/cm2 at an applied field of 20.0 V/μm that is even larger than the Je-value for the UNCD films ((Je)UNCD |
| Databáze: | OpenAIRE |
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