Current flow mechanism in ohmic contact to n-4H-SiC

Autor:	E. A. Posse, F. Yu. Soldatenkov, T. V. Blank, Yu. A. Goldberg
Rok vydání:	2010
Předmět:	Mechanism (engineering) Materials science Condensed matter physics Flow (psychology) Contact resistance Richardson constant Schottky diode Thermionic emission Current (fluid) Condensed Matter Physics Ohmic contact Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials
Zdroj:	Semiconductors. 44:463-466
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782610040093
Popis:	Current flow in an In-n-4H-SiC ohmic contact (n ≈ 3 × 1017 cm−3) has been studied by analyzing the temperature dependence of the per-unit-area contact resistance. It was found that the thermionic emission across an ∼0.1-eV barrier is the main current flow mechanism and the effective Richardson constant is ∼2 × 10−2 A cm−2 K−1.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8a1792daaba403de9b9e5ec217330ba5 https://doi.org/10.1134/s1063782610040093 Zobrazit plný text záznamu Plný text ve formátu PDF