Thermal stability of emitter ballasted HBT's
| Autor: | M.G. Adlerstein |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Ballast
Materials science business.industry Heterostructure-emitter bipolar transistor Heterojunction bipolar transistor Bipolar junction transistor Transistor Electrical engineering Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic Optical and Magnetic Materials law.invention Computer Science::Emerging Technologies law Physics::Accelerator Physics Optoelectronics Electrical and Electronic Engineering Resistor business Common emitter |
| Zdroj: | IEEE Transactions on Electron Devices. 45:1653-1655 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.704359 |
| Popis: | A simple analytical model is derived for thermoelectronic stability in heterojunction bipolar transistors (HBT's). An expression is presented for the value of emitter ballast resistor needed to stabilize the transistor. The result leads to a stability diagram on the current-voltage (I-V) plane which aids in the selection of emitter ballast resistors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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