A Novel Program Operation Scheme With Negative Bias in 3-D NAND Flash Memory

Autor:	Yun-Heub Song, Jae-Min Sim, Myounggon Kang
Rok vydání:	2021
Předmět:	Physics Scheme (programming language) Nand flash memory Window (computing) Negative bias Topology Electronic Optical and Magnetic Materials Scaling effect Electrical and Electronic Engineering Scaling computer Voltage computer.programming_language Degradation (telecommunications)
Zdroj:	IEEE Transactions on Electron Devices. 68:6112-6117
ISSN:	1557-9646 0018-9383
Popis:	In this article, we proposed a new program operation scheme to overcome the degradation of program window in scaling down of 3-D nand flash memory. First, we investigated natural $V_{th}$ shift (NVS) effect in scaled-down structure and confirmed that this effect occurs due to an increase in fringe field by adjacent read voltage. Second, we investigated programmed and erased $V_{th}$ window with scaling down and confirmed that programmed and erased $V_{th}$ is decreased significantly due to the NVS effect. To overcome this scaling effect, we proposed a new program operation scheme using negative bias. The proposed scheme not only improves the program window margin but also achieves voltage scaling. In addition, the proposed scheme enables multistring operation through improved self-boosting, which is a compatible scheme in full array level.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8a13b94f001b6909b469e8fae3404b3c https://doi.org/10.1109/ted.2021.3121648 Zobrazit plný text záznamu