ZrO2 and Al2O3 Thin Films on Ge(100) Grown by ALD: An XPS Investigation
| Autor: | Labrini Sygellou, Spyridon Ladas, S. Kennou, Christoforos A. Krontiras, Violeta Gianneta, D. Skarlatos, N. Xanthopoulos, Stavroula N. Georga |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Analytical chemistry chemistry.chemical_element Germanium Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Atomic layer deposition chemistry.chemical_compound Carbon film X-ray photoelectron spectroscopy chemistry Aluminium oxide Cubic zirconia Thin film Chemical composition |
| Zdroj: | Surface Science Spectra. 18:58-67 |
| ISSN: | 1520-8575 1055-5269 |
| DOI: | 10.1116/11.20100901 |
| Popis: | Thin films of aluminium oxide (Al2O3) and zirconium oxide (ZrO2) were prepared by Atomic Layer Deposition (ALD) on p-type (100) germanium substrates. In the present work a detailed analysis of the films by X-ray photoelectron spectroscopy (XPS) in order to investigate their chemical composition is presented. This study is dedicated to an XPS investigation of the principal core levels (Al, Zr, O) of Al2O3 and ZrO2 thin films. In particular, wide scan spectra, detailed scans for the Zr 3d, Al 2p, O 1s, and C 1s regions and related data for zirconia and alumina films are presented and discussed. The results point out the formation of Al2O3 and ZrO2 films with the presence of OH groups and carbon contamination on the surface. |
| Databáze: | OpenAIRE |
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