Defect and pinning effect of Sn-doping on (La1−xSrx)2Cu1−xSnxO4 superconductors
| Autor: | Guohui Cao, Joseph H. Ross, Yang Li, Guang-Can Che, Zhuzi Zhao, Elisa Baggio-Saitovitch |
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| Rok vydání: | 2002 |
| Předmět: |
Superconductivity
Flux pinning Materials science Condensed matter physics Dopant Energy Engineering and Power Technology Atmospheric temperature range Condensed Matter Physics Magnetic hysteresis Crystallographic defect Electronic Optical and Magnetic Materials Magnetization Electrical and Electronic Engineering Pinning force |
| Zdroj: | Physica C: Superconductivity. 382:243-250 |
| ISSN: | 0921-4534 |
| DOI: | 10.1016/s0921-4534(01)01312-0 |
| Popis: | The effect of Sn-doping on (La 1− x Sr x ) 2 Cu 1− x Sn x O 4 ( x =0.075, 0.090 and 0.110) has been studied. Lattice parameters monotonically decrease with Sn dopant increasing. Sn atoms dominantly occupy Cu sites and form Sn–O clusters as point-like defects. Flux pinning properties of ceramic samples of (La 1− x Sr x ) 2 Cu 1− x Sn x O 4 have been investigated by magnetic measurements from 6 to 30 K up to 5 T. The current carrying scale-length analysis has been determined from the reverse leg of the magnetization hysteresis loops and compared to the actual dimensions of the sample. Magnetization hysteresis loops of the more richly Sn-doped sample exhibit stronger pinning behavior, especially in the higher temperature range. The intra-granular critical current J c in the rich Sn-doping sample has a significant increase. We discuss the experimental results within a pinning model of point-like defects. From our data we infer that the Sn–O cluster near Cu–O layers provides an effective pinning center. |
| Databáze: | OpenAIRE |
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