| Autor: |
Eduard Yu. Buchin, Roman V. Selyukov, Yuri. I. Denisenko, Sergey A. Krivelevich |
| Rok vydání: |
2006 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.677013 |
| Popis: |
New technology of obtaining of SOT-structures by ionic synthesis of buried silica glass layers has been proposed. This technology is based on physical processes of formation of a new phase that appears in ion-synthesized Si-B-O and Si-P-0 systems at heat treatment. It has been shown that synthesized layers can be formed at significantly moderated annealing conditions than in the case of SIMOX-process. The structures have been studied by secondary ion-mass spectrometry (SIMS), Auger-electron spectroscopy and X-ray photoelectron spectroscopy (XPS). The study of electrical characteristics of the structures with buried silica glass layers includes the current-voltage and capacity-voltage measurements. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
