Electron-phonon scattering engineering
| Autor: | A. Namajũnas, J. Požela, K. Požela, V. Jucienė |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Physics
Electron mobility education.field_of_study Condensed matter physics Condensed Matter::Other Phonon Population Electron Double heterostructure Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Quantization (physics) Scattering rate education Quantum well |
| Zdroj: | Semiconductors. 31:69-71 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1187038 |
| Popis: | We present calculations which show that independent quantization of electrons and phonons allows the intra-and intersubband electron-phonon scattering rate in two-dimensional structures to be changed. It is considered how the design of multi-heterostructure quantum well (QW) changes the electron mobility and population of subbands in the QW. It was shown that the insertion of the phonon wall (a few AlAs monolayers) into an AlAs/GaAs/AlAs double heterostructure allows the electron mobility in the QW to be enhanced and electron intersubband population to be inverted. |
| Databáze: | OpenAIRE |
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