Porous p–n junction-induced memory characteristics in low-voltage organic memory transistors

Autor:	Horng-Long Cheng, Yu-Hsuan Huang, Sheng-Kuang Peng, Jr-Jeng Ruan, Wei Yang Chou, Meng-Hung Chen
Rok vydání:	2021
Předmět:	Materials science Acoustics and Ultrasonics business.industry Transistor Condensed Matter Physics Organic memory Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Optoelectronics business Porosity p–n junction Low voltage
Zdroj:	Journal of Physics D: Applied Physics. 55:025110
ISSN:	1361-6463 0022-3727
DOI:	10.1088/1361-6463/ac2bc8
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::89f833c0381f0c405d895ded82f706ef https://doi.org/10.1088/1361-6463/ac2bc8 Zobrazit plný text záznamu