Orientation of the electric‐field gradient arising from a vacancy in Hg0.79Cd0.21Te

Autor:	J. C. Austin, M. L. Swanson, Wm. C. Hughes
Rok vydání:	1993
Předmět:	Crystal Condensed Matter::Materials Science Dipole chemistry Condensed matter physics Vacancy defect Atom General Physics and Astronomy chemistry.chemical_element Hyperfine structure Indium Electric field gradient Principal axis theorem
Zdroj:	Journal of Applied Physics. 74:4943-4947
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.354331
Popis:	We have used the perturbed angular correlation technique to measure the orientation of the electric‐field gradients (EFGs) due to vacancy trapping by substitutional indium donors in the II‐VI semiconductor Hg0.79Cd0.2Te. Previously, two hyperfine interaction frequencies were measured and were attributed to the trapping of a metal vacancy at a next nearest‐neighbor site to the indium atom in bulk solid‐state recrystallized materials. In the present experiments, measurements are done on thin‐film samples to find the principal axes of the EFGs. Both EFGs are found to have principal axes parallel to a 〈111〉 crystal axis, despite the fact that a simple point charge model supports a 〈110〉 EFG for this 〈110〉‐oriented In‐VHg complex. A similar situation exists for indium‐vacancy pairing in other II‐VI semiconductors. We propose that the 〈111〉 EFG orientation arises from the electric dipole moments of the highly polarized Te ions in the region of the vacancy.
Databáze:	OpenAIRE
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