High density metal-insulator-metal capacitor based on ZrO2∕Al2O3∕ZrO2 laminate dielectric

Autor:	Chien-Kang Kao, Yuan-Sheng Lin, Bo-Yu Chen, Wu Hsiao-Che, Yung-Hsien Wu, Ming-Yen Li
Rok vydání:	2008
Předmět:	Permittivity Dielectric absorption Materials science Physics and Astronomy (miscellaneous) business.industry Schottky diode Dielectric Capacitance law.invention Capacitor law Optoelectronics Capacitance probe business Leakage (electronics)
Zdroj:	Applied Physics Letters. 93:033511
ISSN:	1077-3118 0003-6951
Popis:	The metal-insulator-metal (MIM) capacitor for analog and rf applications has been developed with ZrO2∕Al2O3∕ZrO2 laminate as the dielectric. The high capacitance density of 21.54fF∕μm2 can be achieved due to the tetragonal ZrO2 which makes the higher dielectric constant of 38.7. This MIM capacitor also demonstrates the quadratic voltage coefficient of 2443ppm∕V2 and the good leakage current of 2.11×10−6A∕cm2 at 2V which is ascribed to the inserted Al2O3. Since the Schottky emission is suggested as the major dielectric conduction mechanism, a further reduced quadratic voltage coefficient and leakage characteristic can be realized by using a high work-function electrode. The combination of the promising electrical properties and the desirable process integration renders this structure highly suitable for advanced MIM capacitors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::89e7635fa095cdea627fc24d93965f8b https://doi.org/10.1063/1.2958238 Zobrazit plný text záznamu