Calibration and temperature compensation of silicon pressure sensors using ion-implanted trimming resistors
Autor: | Lee Bo-Na, Hyo-Derk Park, Sang-Mo Shin, Kunnyun Kim |
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Rok vydání: | 1999 |
Předmět: |
Input offset voltage
Silicon business.industry Chemistry Metals and Alloys Electrical engineering chemistry.chemical_element Atmospheric temperature range Condensed Matter Physics Pressure sensor Piezoresistive effect Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Optoelectronics Electrical and Electronic Engineering Resistor business Instrumentation Temperature coefficient Signal conditioning |
Zdroj: | Sensors and Actuators A: Physical. 72:148-152 |
ISSN: | 0924-4247 |
DOI: | 10.1016/s0924-4247(98)00214-3 |
Popis: | A piezoresistive silicon pressure sensor with bipolar on-chip signal conditioning circuits permits offset voltage, full scale span and temperature coefficient of offset voltage and full scale span to be calibrated from a trimming ion-implanted resistors. The ion-implanted resistors with temperature coefficient of 1700 ppm/°C or 4700 ppm/°C were fabricated by the same process as that used for the base and piezoresistors. The fabricated sensor exhibits a sensitivity of 40.5 mV/kPa and temperature coefficient of 46 ppm/°C at the temperature range of −10 to 70°C. |
Databáze: | OpenAIRE |
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