Calibration and temperature compensation of silicon pressure sensors using ion-implanted trimming resistors

Autor: Lee Bo-Na, Hyo-Derk Park, Sang-Mo Shin, Kunnyun Kim
Rok vydání: 1999
Předmět:
Zdroj: Sensors and Actuators A: Physical. 72:148-152
ISSN: 0924-4247
DOI: 10.1016/s0924-4247(98)00214-3
Popis: A piezoresistive silicon pressure sensor with bipolar on-chip signal conditioning circuits permits offset voltage, full scale span and temperature coefficient of offset voltage and full scale span to be calibrated from a trimming ion-implanted resistors. The ion-implanted resistors with temperature coefficient of 1700 ppm/°C or 4700 ppm/°C were fabricated by the same process as that used for the base and piezoresistors. The fabricated sensor exhibits a sensitivity of 40.5 mV/kPa and temperature coefficient of 46 ppm/°C at the temperature range of −10 to 70°C.
Databáze: OpenAIRE