| Autor: |
Won Kook Choi, Ji-Won Choi, Jeong Do Yang, Tae Whan Kim, Y. S. No, Dong Hee Park |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
Journal of Sensor Science and Technology. 22:105-110 |
| ISSN: |
1225-5475 |
| DOI: |
10.5369/jsst.2013.22.2.105 |
| Popis: |
We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 µm) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 0.41 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ratio of 9 109. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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