Method for simultaneously reducing the misalignment offset and separating the Hall voltage from the off‐diagonal piezoresistive voltage in Hall effect and piezoresistive devices based on silicon
| Autor: | H. P. Trah, Ramesh G. Mani, K. von Klitzing, S. Lindenkreuz, Franz Jost, Klaus Marx |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon business.industry Thermal Hall effect chemistry.chemical_element Semiconductor device Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Piezoresistive effect Piezoelectricity chemistry Hall effect Optoelectronics Hall effect sensor business Voltage |
| Zdroj: | Applied Physics Letters. 67:2223-2225 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.115110 |
| Popis: | A novel misalignment offset reduction technique is extended in order to separate a piezoresistive voltage, from the Hall voltage, in doubly connected Hall elements based on silicon. In a special configuration, this method exploits directional averaging using biaxial current injection from four electrically separate current sources in order to cancel in situ the stress‐generated off‐diagonal piezoresistive voltage across the Hall voltage contacts. Measurements suggest field‐equivalent offsets below 1 mT in (001) surface n‐Si devices with current injection in the [110] direction. |
| Databáze: | OpenAIRE |
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