Strain Enhanced High Efficiency Germanium Photodetectors in the Near Infrared for Integration with Si

Autor:	Ali Kemal Okyay, Nevran Ozguven, Krishna C. Saraswat, Paul C. McIntyre, Ammar Nayfeh, Ann F. Marshall, Takao Yonehara
Rok vydání:	2006
Předmět:	Materials science Silicon Strain (chemistry) business.industry Band gap Near-infrared spectroscopy Photodetector chemistry.chemical_element Germanium Red shift chemistry Absorption edge Optoelectronics business
Zdroj:	2006 IEEE LEOS Annual Meeting Conference Proceedings.
DOI:	10.1109/leos.2006.279214
Popis:	Germanium-on-silicon photodetectors with responsivities as high as 0.85 A/W at 1550 nm that exhibit dark currents of 100 mA/cm2 and external efficiency up to 68% are demonstrated. Strain in the Ge film was determined to be 0.16%, reducing the optical bandgap by ~12 meV, resulting in a ~20 nm red shift at the absorption edge
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::89ca427e6e035694cc9aaca10713aee4 https://doi.org/10.1109/leos.2006.279214 Zobrazit plný text záznamu