Soft‐punch‐through buffer concept for 600–1200 V IGBTs
| Autor: | Munaf Rahimo, Rachid Jabrany, Maxi Andenna, Chiara Corvasce, Charalampos Papadopoulos, Elizabeth Buitrago |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry 020209 energy 020208 electrical & electronic engineering Doping Bipolar junction transistor 02 engineering and technology Substrate (electronics) Epitaxy Buffer (optical fiber) 0202 electrical engineering electronic engineering information engineering Optoelectronics Wafer Electrical and Electronic Engineering business Layer (electronics) |
| Zdroj: | IET Power Electronics. 12:3874-3881 |
| ISSN: | 1755-4543 |
| DOI: | 10.1049/iet-pel.2019.0124 |
| Popis: | A new soft-punch-through (SPT) buffer concept for 600-1200 V insulated-gate bipolar transistors (IGBTs) based on thin wafer technology is proposed. The new SPT structure employs an epitaxial layer for the lightly doped n-type drift region, which is grown on a thick starting material or substrate. The n-type substrate serves as the SPT buffer region. The doping concentration of both drift and buffer regions are comparably low with the buffer region having a higher doping level. The design options of this new concept are discussed based on experimental data and 1200 V IGBTs using the new buffer concept are compared to IGBTs employing previously published buffer technology. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text