Electromigration and Line R of Graphene Capped Cu Dual Damascene Interconnect

Autor:	T. Nogami, S. Nguyen, H. Huang, N. Lanzillo, H. Shobha, J. Li, B. Peethela, A. Parbatani, B. van Schravendijk, B. Varadarajan, I. Narkeviciute, E. Srinivasan, K. Sharma, R. Knarr, S. Schmitz, V. Ramanan, D. Edelstein
Rok vydání:	2021
Zdroj:	2021 IEEE International Electron Devices Meeting (IEDM).
DOI:	10.1109/iedm19574.2021.9720525
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::89a86e1c7f8fdaa73dad0d9243815490 https://doi.org/10.1109/iedm19574.2021.9720525 Zobrazit plný text záznamu