Thermal decomposition behavior of the HfO2/SiO2/Si system

Autor:	T. Nishimura, G. D. Wilk, Safak Sayan, Eric Garfunkel, W. H. Schulte, Torgny Gustafsson
Rok vydání:	2003
Předmět:	chemistry.chemical_compound Materials science chemistry X-ray photoelectron spectroscopy Scanning electron microscope Silicide Thermal decomposition Analytical chemistry General Physics and Astronomy Thermal stability Chemical vapor deposition Chemical decomposition Overlayer
Zdroj:	Journal of Applied Physics. 94:928-934
ISSN:	1089-7550 0021-8979
Popis:	We report on the thermal decomposition of uncapped, ultrathin HfO2 films grown by chemical vapor deposition on SiO2/Si(100) substrates. Medium energy ion scattering, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy were used to examine the films after they had been annealed in vacuum to 900–1050 °C. Film decomposition is a strong function of the HfO2 overlayer thickness at a given temperature, but the underlying SiO2 layer thickness does not significantly affect the thermal stability of the HfO2 film. Oxygen diffusion in the system was monitored by 16O/18O isotopic labeling methods. Direct evidence of silicide formation is observed upon decomposition.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::89a379810111f38142c63b6a4c8619a5 https://doi.org/10.1063/1.1578525 Zobrazit plný text záznamu