Topological Insulator State in Thin Bismuth Films Subjected to Plane Tensile Strain
| Autor: | V. A. Komarov, N. S. Kablukova, E. V. Demidov, A. N. Krushel’nitskii, V. M. Grabov |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Magnetoresistance chemistry.chemical_element Substrate (electronics) equipment and supplies Condensed Matter Physics 01 natural sciences Thermal expansion Electronic Optical and Magnetic Materials Bismuth chemistry Hall effect Electrical resistivity and conductivity Topological insulator 0103 physical sciences Composite material 010306 general physics Surface states |
| Zdroj: | Physics of the Solid State. 60:457-460 |
| ISSN: | 1090-6460 1063-7834 |
| DOI: | 10.1134/s106378341803006x |
| Popis: | The results of experimental examination of galvanomagnetic properties of thin bismuth films subjected to plane tensile strain resulting from the difference in thermal expansion coefficients of the substrate material and bismuth are presented. The resistivity, the magnetoresistance, and the Hall coefficient were studied at temperatures ranging from 5 to 300 K in magnetic fields as strong as 0.65 T. Carrier densities were calculated. A considerable increase in carrier density in films thinner than 30 nm was observed. This suggests that surface states are more prominent in thin bismuth films on mica substrates, while the films themselves may exhibit the properties of a topological insulator. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink