| Autor: |
Vladislav Vashchenko, Andrei Shibkov, Antonio Gallerano |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs. |
| DOI: |
10.1109/ispsd.2011.5890807 |
| Popis: |
This study presents for the first time ESD protection solutions in integrated silicon process technologies for the voltage range up to 600V. The ESD protection clamp is implemented using a NLDMOS-SCR type ESD device architecture. The study presents both reversible triggering I-V characteristics suitable for package level ESD protection as well as dependence of the ESD device characteristics upon the structure parameters and the state of a control electrode. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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