Transient electroluminescence from hole transporting emitting layer in nanosecond region

Autor:	Hiroshi Tokailin, Tadashi Kusumoto, Hisahiro Higashi, Chishio Hosokawa
Rok vydání:	1993
Předmět:	Electron mobility Physics and Astronomy (miscellaneous) business.industry Chemistry Electric field Time constant Optoelectronics Thin film Nanosecond Electroluminescence business Layer (electronics) Indium tin oxide
Zdroj:	Applied Physics Letters. 63:1322-1324
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.109718
Popis:	Transient electroluminescence (EL) for an organic thin film cell with a hole transporting emitting layer was observed by short voltage pulse measurements. For the cell with indium tin oxide/hole transporting emitting layer/Mg:Ag structure, we realized very fast response at a time about 20 ns. This response time has been the fastest in organic EL ever reported. In these measurements, we could observe carrier transit time. We found that this carrier transit time was attributed to that of holes in the emitting layer. The hole mobility in 120‐nm‐thick emitting layer was obtained to be 1±0.3×10−3 cm2/V s in the electric field region from 1 to 3 MV/cm. Furthermore, we could observe the fast EL decay component with a time constant of 3.0±1.5 ns, which was essentially attributed to the decay of singlet excited states.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::89938381548dd84e106129353067a4f7 https://doi.org/10.1063/1.109718 Zobrazit plný text záznamu