The influence of phosphorus, arsenic and antimony vapour ambients on the diffusion of zinc into gallium arsenide

Autor:	Nicolaas Stolwijk, Wolfgang Jäger, H.-G. Hettwer, K. Urban, A. Rucki, Helmut Mehrer, G. Bösker
Rok vydání:	1995
Předmět:	Precipitation (chemistry) Scattering Analytical chemistry Mineralogy chemistry.chemical_element Zinc Condensed Matter Physics Crystallographic defect Gallium arsenide chemistry.chemical_compound chemistry Antimony General Materials Science Dislocation Arsenic
Zdroj:	Materials Chemistry and Physics. 42:68-71
ISSN:	0254-0584
DOI:	10.1016/0254-0584(95)80042-5
Popis:	Diffusion of Zn at high concentrations into GaAs under As-deficient ambient conditions causes generation of crystal defects like dislocation loops, elongated dislocations and Ga precipitates decorated with voids throughout the diffusion zone. Similar treatments under As vapour lead to recovery from diffusion-induced damage in a region underneath the GaAs surface. This feature is accompanied by the appearance of two distinct steps in the Zn concentration profile. Previous experiments suggested these phenomena to be connected with out-diffusion of Ga from the precipitates towards the surface. The present work shows that the replacement of As by P or Sb in the diffusion environment produces similar recovery effects. This observation provides evidence that ambient Group V elements render near-surface GaAs to an effective sink for diffusion-induced excess Ga.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::899147c56873e9e86b6e3f24ffa9294b https://doi.org/10.1016/0254-0584(95)80042-5 Zobrazit plný text záznamu Full Text from ScienceDirect