On the shift of the electroluminescence spectra of In x Ga1 − x N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses
| Autor: | V. V. Borshch, V. P. Veleschuk, M. P. Kisselyuk, Z. K. Vlasenko, A. I. Vlasenko, D. N. Khmil |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Silicon Inorganic chemistry Analytical chemistry chemistry.chemical_element Substrate (electronics) Electroluminescence Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials symbols.namesake Stark effect chemistry symbols Tin Layer (electronics) Quantum well Indium |
| Zdroj: | Semiconductors. 49:1007-1011 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The shift between the maxima of the electroluminescence spectra of In x Ga1 − x N/GaN structures is measured at forward and reverse bias depending on the indium content x in the quantum well and on the substrate material (SiC, AuSn/Si, and Al2O3). It is established that this shift increases as the indium concentration in the In x Ga1 − x N layer and mechanical stresses from the substrate increase. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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