| Autor: |
H.-J. Schulze, Martin Faccinelli, Peter Hadley, Stefan Kirnstötter, Johannes Georg Laven, Moriz Jelinek, Werner Schustereder |
| Rok vydání: |
2013 |
| Předmět: |
|
| Zdroj: |
Solid State Phenomena. :311-316 |
| ISSN: |
1662-9779 |
| Popis: |
Protons with energies of 1 MeV and 2.5 MeV were implanted into a p-doped silicon wafer and then the wafer was annealed at 350 °C for one hour. This resulted in two n-doped layers in the otherwise p-doped sample. The carrier concentration was measured using spreading resistance profiling while the positions of the four pn-junctions were measured using electron beam induced current measurements. The carrier concentration is not limited by the available hydrogen but by the concentration of suitable radiation induced defects. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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