In place growth of vertical Si nanowires for surround gated MOSFETs with self aligned contact formation

Autor:	Christoph Henkel, M. Steinmair, Alois Lugstein, Emmerich Bertagnolli
Rok vydání:	2010
Předmět:	Materials science Silicon business.industry Nanowire Silicon on insulator chemistry.chemical_element Nanotechnology Substrate (electronics) Semiconductor chemistry Logic gate MOSFET Optoelectronics business Nanodevice
Zdroj:	2010 3rd International Nanoelectronics Conference (INEC).
Popis:	We demonstrate the simultaneous vertical integration of self contacting and highly oriented nanowires (NWs) into airbridge structures. With the use of conventional semiconductor processing techniques and vapour-liquid-solid (VLS) growth a suspended vertical NW architecture is formed on a silicon on insulator (SOI) substrate where the nanodevice will later be fabricated on. The VLS grown Si-NWs are contacted to prepatterned airbridges by a self aligned process and there is no need for post-growth NW assembly or alignment. To demonstrate the potential of this method surround gated vertical MOSFETs have been fabricated with a highly simplified integration scheme combining top-down and bottom-up approaches.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::898395e1c77f71f8fe6c71da77c576c5 https://doi.org/10.1109/inec.2010.5424987 Zobrazit plný text záznamu